Reliability studies on sub 100 nm SOI-MNSFETs
- Mahapatra, S.
- Ramgopal Rao, V.
- Vasi, J.
- Cheng, B.
- Woo, J. C. S.
Publication date
January 2000
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
SOI MNSFETs with channel lengths down to 100 nm and having a Jet Vapor Deposited (JVD) silicon nitride (Si3N4) gate dielectric are fabricated and characterized. The JVD MNSFETs show comparable performance in comparison to conventional SiO2 SOI-MOSFETs, in terms of low gate leakage, Si3N4/Si interface quality and Ion/Ioff ratio. In addition, the MNSFETs show better hot carrier reliability compared to conventional MOSFETs. Our results explore the worthiness of JVD Si3N4 as gate dielectric for future low power ULSI applications
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