Recent advances in physical vapor growth processes for ferroelectric thin films

Recent developments in the deposition of ferroelectric thin films involving physical vapor depositions are described, which include (a) multimagnetron sputter deposition, (b) multi-ion-beam reactive sputter (MIBERS) deposition, (c) pulsed excimer laser ablation, and (d) electron cyclotron resonance plasma-assisted deposition. The prevailing intrinsic low-energy ion bombardment during the growth process, common to these methods, may be used to control composition, crystallization temperature, and microstructure. A low-energy (60-75 eV) off-normal incidence ion bombardment in the MIBERS technique and a dc glow discharge in the excimer laser ablation of ferroelectric Pb(Zr,Ti)O3 thin films indicated a reduction in the phase formation/crystallization temperature, improved the electrical properties, microstructure, and the surface smoothness. Discussion is presented emphasizing the effects of low-energy ion bombardment during deposition of ferroelectric films