Radiation induced degradation of electrical characteristics of III-V devices
- Paccagnella, A.
- Del Papa, C.
- Chitussi, P.
- Fuochi, P.G.
- Benetti, P.
Publication date
April 1994
DOIAbstract
The effect of irradiation with gamma rays, electrons or neutrons on the dc and low frequency ac electrical characteristics of III-V FET devices has been studied in this work. The electrical parameters more sensitive to radiation damage have been identified and their behaviour has been compared among the different device types. Pseudomorphic HEMTs have been found to tolerate radiation exposures better than GaAs MESFETs and AlGaAs/GaAs HEMTs
Add to ORKG