An electromagnetic model of Vertical Cavity Surface Emitting Lasers (VCSEL) based on semiconductor compounds is developed; it relies on the rigorous solution of Maxwell equations, including the field confinement due to the gain guiding mechanism which strongly influences the noise properties. The solution of the problem is based on an integral equation of the Fredholm type whose eigenvalues are related to the threshold condition and eigenvectors give the field distributions
Vertical-cavity surface-emitting lasers (VCSELs) are presently the subject of intense research due t...
This paper describes a comprehensive simulation technique for semiconductor lasers. In particular, a...
published_or_final_versionElectrical and Electronic EngineeringMasterMaster of Philosoph
Two models have been developed to simulate a vertical-cavity surface-emitting laser (VCSEL). The fir...
Abstract—We present a numerical optical model for calculating threshold material gain in vertical-ca...
A microscopic theory for the interaction between semiconductor quantum well structures and laser fie...
The problem of obtaining the lasing modes and corresponding threshold conditions for vertical cavity...
51 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.In response to the growing imp...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
Small signal equivalent circuit model and modulation properties of vertical cavity-surface emitting ...
We present detailed yet largely analytical models for gain, optical bandwidth, and saturation power ...
Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given ...
Optical mode frequencies and associated linear thresholds of lasing for a simplified VCSEL model con...
Current evolution in Datacoms and Gigabit Ethernet have made 850nm Vertical Cavity Surface Emitting ...
74 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.The comprehensive semiconducto...
Vertical-cavity surface-emitting lasers (VCSELs) are presently the subject of intense research due t...
This paper describes a comprehensive simulation technique for semiconductor lasers. In particular, a...
published_or_final_versionElectrical and Electronic EngineeringMasterMaster of Philosoph
Two models have been developed to simulate a vertical-cavity surface-emitting laser (VCSEL). The fir...
Abstract—We present a numerical optical model for calculating threshold material gain in vertical-ca...
A microscopic theory for the interaction between semiconductor quantum well structures and laser fie...
The problem of obtaining the lasing modes and corresponding threshold conditions for vertical cavity...
51 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000.In response to the growing imp...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
Small signal equivalent circuit model and modulation properties of vertical cavity-surface emitting ...
We present detailed yet largely analytical models for gain, optical bandwidth, and saturation power ...
Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given ...
Optical mode frequencies and associated linear thresholds of lasing for a simplified VCSEL model con...
Current evolution in Datacoms and Gigabit Ethernet have made 850nm Vertical Cavity Surface Emitting ...
74 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.The comprehensive semiconducto...
Vertical-cavity surface-emitting lasers (VCSELs) are presently the subject of intense research due t...
This paper describes a comprehensive simulation technique for semiconductor lasers. In particular, a...
published_or_final_versionElectrical and Electronic EngineeringMasterMaster of Philosoph