At this time, GaAs PHEMTs exhibit higher power output than InP HEMTs at 60 and 94 GHz. InP HEMTs, however, feature power-added efficiency values that exceed GaAs PHEMTs by about 5 to 20 percentage points at 94 GHz. As a consequence, InP HEMTs remain a superior candidate for millimeter-wave power applications. The reason for the inferior output power of InP HEMTs lies in their relatively small on-state and off-state breakdown voltages. This paper reviews the state of the art of millimeter-wave power HEMT technology as well as recent advances in understanding of breakdown phenomena. It also discusses the prospects and challenges facing InP HEMTs in performance, reliability and low-cost manufacturing
This paper reviews most recent results concerning reliability of InP-based and metamorphic high elec...
International Telemetering Conference Proceedings / November 14-16, 1978 / Hyatt House Hotel, Los An...
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length an 4" GaAs subst...
Improvements in the last decade in InP materials growth, device processing techniques, characterizat...
InP-based HEMT technology presents substantial performance advantages for millimeter wave applicatio...
The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive p...
InP-based HEMTs have to date demonstrated the best high frequency characteristics of any transistor,...
electro-optics/electronics MM-wave cA, Power MISFET monolithic indium phosphide 19. ABSTRACT (C mmwv...
The interest for devices operating in the millimeter-wave (mmW) range (30-300 GHz) and submillimeter...
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technolo...
Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cu...
Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applicatio...
InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demons...
High Voltage Breakdown (HVB) HPA MMIC based on GaAs pHEMTs technology represents a useful way for hi...
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
This paper reviews most recent results concerning reliability of InP-based and metamorphic high elec...
International Telemetering Conference Proceedings / November 14-16, 1978 / Hyatt House Hotel, Los An...
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length an 4" GaAs subst...
Improvements in the last decade in InP materials growth, device processing techniques, characterizat...
InP-based HEMT technology presents substantial performance advantages for millimeter wave applicatio...
The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive p...
InP-based HEMTs have to date demonstrated the best high frequency characteristics of any transistor,...
electro-optics/electronics MM-wave cA, Power MISFET monolithic indium phosphide 19. ABSTRACT (C mmwv...
The interest for devices operating in the millimeter-wave (mmW) range (30-300 GHz) and submillimeter...
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technolo...
Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cu...
Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applicatio...
InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demons...
High Voltage Breakdown (HVB) HPA MMIC based on GaAs pHEMTs technology represents a useful way for hi...
A high performance, high yield, and high throughput millimeter-wave, Q band, power pHEMT process tec...
This paper reviews most recent results concerning reliability of InP-based and metamorphic high elec...
International Telemetering Conference Proceedings / November 14-16, 1978 / Hyatt House Hotel, Los An...
Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length an 4" GaAs subst...