Different noise parameter measurement methods and receiver requirements are discussed. A set-up for on-wafer V-band noise parameter measurements using so called cold-source method is presented. The operation of the system is demonstrated by showing experimental results of a InP HEMT (58-62 GHz) and a passive component (51-66 GHz)
The noise figures of four InP HEMT LNAs at cryogenic temperature of 20 k were measured in millilab a...
A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-w...
A new method for systematic measurements of noise parameters of field effect devices has been develo...
Noise parameter measurement set-up for 60 GHz is described. The designed and built set-up is based o...
Several current and planned space missions for earth observation and astronomy require very low nois...
A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is ...
A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement ...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
A novel on-wafer resistive noise source, useful for noise characterization of microwave devices with...
The authors present a method for calibrating the four noise parameters of a noise receiver which doe...
The theoretical background of thermal noise representation in two-port networks is presented. From t...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
Several current and planned scientific, commercial, and military applications require millimetre wav...
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The crit...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
The noise figures of four InP HEMT LNAs at cryogenic temperature of 20 k were measured in millilab a...
A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-w...
A new method for systematic measurements of noise parameters of field effect devices has been develo...
Noise parameter measurement set-up for 60 GHz is described. The designed and built set-up is based o...
Several current and planned space missions for earth observation and astronomy require very low nois...
A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is ...
A wide-band on-wafer noise parameter measurement system at 50-75 GHz is presented. This measurement ...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
A novel on-wafer resistive noise source, useful for noise characterization of microwave devices with...
The authors present a method for calibrating the four noise parameters of a noise receiver which doe...
The theoretical background of thermal noise representation in two-port networks is presented. From t...
A wideband automated on-wafer noise parameter measurement system has been built. Using measurement s...
Several current and planned scientific, commercial, and military applications require millimetre wav...
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The crit...
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is present...
The noise figures of four InP HEMT LNAs at cryogenic temperature of 20 k were measured in millilab a...
A cryogenic on-wafer measurement system has been developed for 75-110 GHz frequencies (W-band). On-w...
A new method for systematic measurements of noise parameters of field effect devices has been develo...
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