Development of complete on-wafer cryogenic characterization: S-parameter, noise-parameter and load-pull

In this paper, we review recent progress at Georgia Tech's Microwave Application Group towards the development of complete cryogenic analysis techniques. This includes development of on-wafer cryogenic (I5K to 300K) S-parameter, Noise Parameter, and Load-Pull measurement techniques. These data are then used for detailed analysis of various device technologies for development of improved small and large signal models. Applications include optimization of transistor device technology for reduced temperature operation, development of cryogenic low-noise amplifiers, and reduced temperature power amplifier operation