InP/GaAs0.51Sb0.49/InP DHBT (Double Heterojunction Bipolar Transistor) technology is investigated and presented for low power consumption and high power microwave amplification. A low power monolithic transimpedance circuit using InP/GaAsSb/ InP DHBTs presented a 11.0dB gain, 9.5GHz bandwidth, 46d
A distributed amplifier for use as a modulator driver in next generation optical data communication ...
Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs Dou...
[[abstract]]© 2003 Oxford University Press-We report for the first time the design, process and char...
[[abstract]]A low-power transimpedance amplifier is presented based on InP/GaAsSb/InP DHBT technolog...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed ...
This thesis treats the design and characterization of amplifiers operating up to submillimeter-wave ...
This work reports a wideband transimpedance amplifier MMIC with ultra-low input referred noise curre...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar tra...
International audienceIn this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with ex...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction ...
This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and ...
A distributed amplifier for use as a modulator driver in next generation optical data communication ...
Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs Dou...
[[abstract]]© 2003 Oxford University Press-We report for the first time the design, process and char...
[[abstract]]A low-power transimpedance amplifier is presented based on InP/GaAsSb/InP DHBT technolog...
The InP/GaAsSb/InP DHBT (Double Heterojunction Bipolar Transistor) has demonstrated superior high-fr...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
Three wideband amplifiers in double-heterojunction bipolar transistor technology have been designed ...
This thesis treats the design and characterization of amplifiers operating up to submillimeter-wave ...
This work reports a wideband transimpedance amplifier MMIC with ultra-low input referred noise curre...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar tra...
International audienceIn this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with ex...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction ...
This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and ...
A distributed amplifier for use as a modulator driver in next generation optical data communication ...
Distributed amplifier MMICs with very large bandwidth were realized using an in-house InP/InGaAs Dou...
[[abstract]]© 2003 Oxford University Press-We report for the first time the design, process and char...
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