The technological building blocks for high temperature HFET devices are described. The RF characteristics are investigated by on-wafer testing up to 200°C and the DC characteristics are evaluated up to 850°C in vacuum. Permanent degradation is observed above 650°C. It is concluded, that the chemical stability of the heterostructure material itself may be mainly responsible for this limit
In the present paper we review the most recent degradation modes and mechanisms recently observed in...
Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility trans...
The use of wide bandgap devices and circuits has increased dramatically in recent years in step with...
Gallium Nitride-based (GaN) Heterostructure Field Effect Transistors (HFETs) allow for the realizati...
GaN Heterostructure Field Effect Transistors (HFETs) have been the subject of intense research over ...
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has b...
In this article, we report on the temperature-dependent GaN HEMT behavior. To evaluate the potential...
The temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature...
GaN is an attractive material for use in high-temperature or high-power electronic devices due to it...
This study focuses on temperature dependent characterization of a 0.25×1500 μm2 GaN HEMT. The impact...
This study focuses on temperature dependent characterization of a 0.25x1500 µm2 GaN HEMT. The impact...
GaN-based high-electron mobility transistors (HEMTs) have received increasing attention for their ou...
AlGaN/GaN high-electron mobility transistors (HEMTs) are excellent candidates for high-power and hig...
Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility trans...
Gallium Nitride electronics currently represents the most promising technology for a number of extre...
In the present paper we review the most recent degradation modes and mechanisms recently observed in...
Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility trans...
The use of wide bandgap devices and circuits has increased dramatically in recent years in step with...
Gallium Nitride-based (GaN) Heterostructure Field Effect Transistors (HFETs) allow for the realizati...
GaN Heterostructure Field Effect Transistors (HFETs) have been the subject of intense research over ...
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has b...
In this article, we report on the temperature-dependent GaN HEMT behavior. To evaluate the potential...
The temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature...
GaN is an attractive material for use in high-temperature or high-power electronic devices due to it...
This study focuses on temperature dependent characterization of a 0.25×1500 μm2 GaN HEMT. The impact...
This study focuses on temperature dependent characterization of a 0.25x1500 µm2 GaN HEMT. The impact...
GaN-based high-electron mobility transistors (HEMTs) have received increasing attention for their ou...
AlGaN/GaN high-electron mobility transistors (HEMTs) are excellent candidates for high-power and hig...
Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility trans...
Gallium Nitride electronics currently represents the most promising technology for a number of extre...
In the present paper we review the most recent degradation modes and mechanisms recently observed in...
Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility trans...
The use of wide bandgap devices and circuits has increased dramatically in recent years in step with...
DOI
Add to ORKG