The processing and scalability of AlGaN/GaN HEMTs

Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs

Chung, Jinwook
Kim, Tae-Woo
Palacios, Tomas

December 2010

In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electro...

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

Shenqi Qu
Xiaoliang Wang
Hongling Xiao
Cuimei Wang
Lijuan Jiang
Chun Feng
Hong Chen
Haibo Yin
Enchao Peng
He Kang
Zhanguo Wang
Xun Hou

June 2014

A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electro...

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

Wang XL
Wang CM
Hu GX
Wang JX
Ran JX
Fang CB
Li JP
Zeng YP
Li JM
Liu XY
Liu J
Qian H
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn

January 2005

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrat...

The processing and scalability of AlGaN/GaN HEMTs

Jacobs, B.
Karouta, F.
Kwaspen, J.J.M.
Hageman, P.R.
Kaufmann, L.M.F.
Larsen, P.K.

October 1999

This paper presents a discussion on the processing of AlGaN/GaN HEMTs with different gate widths but...

A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs

Schwantuschke, D.
Seelmann-Eggebert, M.
Brueckner, P.
Quay, R.
Mikulla, M.
Ambacher, O.
Kallfass, I.

January 2013

In this paper, we present a fully-scalable compact small-signal equivalent circuit model for AlGaN/G...

Performance Analysis of AlGaN/GaN HEMT and MOSHEMT Devices Towards Circuit Application

Bhoi , Kshirodra Kumar

May 2018

Today's world is digital world or we can say electronics world. So basically technology goes on incr...

Deep submicron III-N HEMTs - technological development and reliability

Quay, Rüdiger
Dammann, Michael
Kemmer, Tobias
Brueckner, Peter
Ćwikliński, Maciej
Schwantuschke, Dirk
Krause, Sebastian
Leone, Stefano
Mikulla, Michael

January 2019

This paper gives the state-of-the-art (SOA) of the technological development and the reliability sta...

Fabrication of AlGaN/GaN High Electron Mobility Transistors

Gopal Thirupakuzi Vangipuram, Vijay

April 2019

A first attempt at fabricating AlGaN/GaN High Electron Mobility Transistors (HEMTs) on a Si substrat...

Uniformity and scalability of AlGaN/GaN HEMTS using stepper lithography

Lossy, R.
Hilsenbeck, J.
Wurfl, J.
Obloh, H.

January 2001

AlGaN/GaN HEMTs processed by 2 inch stepper lithography in a production line environment are present...

GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications

Efthymiou, Loizos

April 2018

Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices ...

Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications

Brueckner, P.
Kiefer, R.
Haupt, C.
Leuther, A.
Müller, S.
Quay, R.
Schwantuschke, D.
Mikulla, M.
Ambacher, O.

January 2012

In this paper a Gallium Nitride MMIC technology for RF- and microwave and high power amplifiers base...

Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development

Kuliev, Almaz S.

97 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.In this work, the development ...

Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology

Peroni, M
Romanin, P
Dominijanni, D
Notargiacomo, A
Giovine, E
NANNI, ANTONIO
CICCOGNANI, WALTER
COLANGELI, SERGIO

January 2011

In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250n...

Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

TAKHAR, K
KUMAR, SA
MEER, M
UPADHYAY, BB
UPADHYAY, P
KHACHARIYA, D
GANGULY, S
SAHA, D

January 2016

Here we have demonstrated AlGaN/GaN based high electron mobility transistors with scaled source exte...

Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

Liwei Jin
Zhiqun Cheng
Qingna Wang

January 2013

This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructu...

Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs

Chung, Jinwook
Kim, Tae-Woo
Palacios, Tomas

December 2010

In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electro...

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

Shenqi Qu
Xiaoliang Wang
Hongling Xiao
Cuimei Wang
Lijuan Jiang
Chun Feng
Hong Chen
Haibo Yin
Enchao Peng
He Kang
Zhanguo Wang
Xun Hou

June 2014

A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electro...

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

Wang XL
Wang CM
Hu GX
Wang JX
Ran JX
Fang CB
Li JP
Zeng YP
Li JM
Liu XY
Liu J
Qian H
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn

January 2005

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrat...

The processing and scalability of AlGaN/GaN HEMTs

Jacobs, B.
Karouta, F.
Kwaspen, J.J.M.
Hageman, P.R.
Kaufmann, L.M.F.
Larsen, P.K.

October 1999

This paper presents a discussion on the processing of AlGaN/GaN HEMTs with different gate widths but...

A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs

Schwantuschke, D.
Seelmann-Eggebert, M.
Brueckner, P.
Quay, R.
Mikulla, M.
Ambacher, O.
Kallfass, I.

January 2013

In this paper, we present a fully-scalable compact small-signal equivalent circuit model for AlGaN/G...

Performance Analysis of AlGaN/GaN HEMT and MOSHEMT Devices Towards Circuit Application

Bhoi , Kshirodra Kumar

May 2018

Today's world is digital world or we can say electronics world. So basically technology goes on incr...

Deep submicron III-N HEMTs - technological development and reliability

Quay, Rüdiger
Dammann, Michael
Kemmer, Tobias
Brueckner, Peter
Ćwikliński, Maciej
Schwantuschke, Dirk
Krause, Sebastian
Leone, Stefano
Mikulla, Michael

January 2019

This paper gives the state-of-the-art (SOA) of the technological development and the reliability sta...

Fabrication of AlGaN/GaN High Electron Mobility Transistors

Gopal Thirupakuzi Vangipuram, Vijay

April 2019

A first attempt at fabricating AlGaN/GaN High Electron Mobility Transistors (HEMTs) on a Si substrat...

Uniformity and scalability of AlGaN/GaN HEMTS using stepper lithography

Lossy, R.
Hilsenbeck, J.
Wurfl, J.
Obloh, H.

January 2001

AlGaN/GaN HEMTs processed by 2 inch stepper lithography in a production line environment are present...

GaN-on-Silicon HEMTs and Schottky diodes for high voltage applications

Efthymiou, Loizos

April 2018

Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices ...

Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications

Brueckner, P.
Kiefer, R.
Haupt, C.
Leuther, A.
Müller, S.
Quay, R.
Schwantuschke, D.
Mikulla, M.
Ambacher, O.

January 2012

In this paper a Gallium Nitride MMIC technology for RF- and microwave and high power amplifiers base...

Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development

Kuliev, Almaz S.

97 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.In this work, the development ...

Low noise performances of scalable sub-quarter-micron GaN HEMT with Field Plate technology

Peroni, M
Romanin, P
Dominijanni, D
Notargiacomo, A
Giovine, E
NANNI, ANTONIO
CICCOGNANI, WALTER
COLANGELI, SERGIO

January 2011

In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250n...

Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

TAKHAR, K
KUMAR, SA
MEER, M
UPADHYAY, BB
UPADHYAY, P
KHACHARIYA, D
GANGULY, S
SAHA, D

January 2016

Here we have demonstrated AlGaN/GaN based high electron mobility transistors with scaled source exte...

Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

Liwei Jin
Zhiqun Cheng
Qingna Wang

January 2013

This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructu...

Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs

Chung, Jinwook
Kim, Tae-Woo
Palacios, Tomas

December 2010

In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electro...

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

Shenqi Qu
Xiaoliang Wang
Hongling Xiao
Cuimei Wang
Lijuan Jiang
Chun Feng
Hong Chen
Haibo Yin
Enchao Peng
He Kang
Zhanguo Wang
Xun Hou

June 2014

A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electro...

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

Wang XL
Wang CM
Hu GX
Wang JX
Ran JX
Fang CB
Li JP
Zeng YP
Li JM
Liu XY
Liu J
Qian H
Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn

January 2005

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrat...

The processing and scalability of AlGaN/GaN HEMTs

Abstract

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The processing and scalability of AlGaN/GaN HEMTs

Abstract

Extracted data

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