This paper relates the state of the art of the HEMT low noise technologies for the space applications at millimeter wave and specially for the earth observation in the G-band (140 – 220 GHz)).The different III-V technologies (HEMT and LNA)and their associated performance are presented.Parameters limiting the improvement of high frequency characteristics for HEMTs with the downscaling process are studied
The metamorphic high electron mobility transistor (mHEMT) concept exploits the superior high speed a...
We have developed amplifier based receivers using Indium Phosphide high electron mobility transistor...
The research of the Advanced Radio Instrumentation Group (ARIG) is focused on the design and develop...
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy application...
In this paper we will present recent work on low noise amplifiers developed for very high frequencie...
This thesis describes the design, realization and characterization of low-noise amplifiers for diffe...
Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for ...
We present the results of a development activity for cryogenic Low Noise Amplifiers based on HEMT te...
Two Q-band monolithic low noise amplifiers have been designed and characterized. A study about deple...
We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), wh...
HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactu...
A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. I...
This decade will be very important for cosmology due to several missions to measure the cosmic micro...
A monolithic P-HEMT Ka-band low noise amplifier is reported. This circuit was developed for being us...
Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on t...
The metamorphic high electron mobility transistor (mHEMT) concept exploits the superior high speed a...
We have developed amplifier based receivers using Indium Phosphide high electron mobility transistor...
The research of the Advanced Radio Instrumentation Group (ARIG) is focused on the design and develop...
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy application...
In this paper we will present recent work on low noise amplifiers developed for very high frequencie...
This thesis describes the design, realization and characterization of low-noise amplifiers for diffe...
Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for ...
We present the results of a development activity for cryogenic Low Noise Amplifiers based on HEMT te...
Two Q-band monolithic low noise amplifiers have been designed and characterized. A study about deple...
We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), wh...
HEMT-based receiver arrays with excellent noise and scalability are already starting to be manufactu...
A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. I...
This decade will be very important for cosmology due to several missions to measure the cosmic micro...
A monolithic P-HEMT Ka-band low noise amplifier is reported. This circuit was developed for being us...
Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on t...
The metamorphic high electron mobility transistor (mHEMT) concept exploits the superior high speed a...
We have developed amplifier based receivers using Indium Phosphide high electron mobility transistor...
The research of the Advanced Radio Instrumentation Group (ARIG) is focused on the design and develop...