In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT) high electron mobility transistor technologies. Starting with a modulator-driver MMIC for optical transmission systems, we describe state of the art MMICs like a 94 GHz low-noise amplifier, a 35 GHz and a 60 GHz medium power amplifier and finally we demonstrate the feasibility of a monolithically integrated 94 GHz single-chip FMCW radar sensor
In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic ...
We present a passivated 50 nm gate length metamorphic high electron mobility transistor (mHEMT) tech...
Two metamorphic InAlAs/InGaAs based high electron mobility transistor (MHEMT) technologies have been...
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT)...
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic i...
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MM...
In this paper, we present the development of two 94 GHz power amplifier MMICs for use in high-resolu...
Advanced circuits based on metamorphic HEMT (MHEMT)technologies on 4 ”GaAs substrates for both milli...
A 77-GHz automotive radar system for collision avoidance and intelligent cruise control has recently...
In this paper, we present the development of a W-band power amplifier (PA) circuit and a G-band low-...
A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing...
In this paper, we present the development of advanced millimetre-wave and submillimeter-wave monolit...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length wer...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic ...
We present a passivated 50 nm gate length metamorphic high electron mobility transistor (mHEMT) tech...
Two metamorphic InAlAs/InGaAs based high electron mobility transistor (MHEMT) technologies have been...
In this paper we present coplanar MMICs based on both, metamorphic (MHEMT) and pseudomorphic (PHEMT)...
In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic i...
In this paper, we present the development of submillimeter-wave monolithic integrated circuits (S-MM...
In this paper, we present the development of two 94 GHz power amplifier MMICs for use in high-resolu...
Advanced circuits based on metamorphic HEMT (MHEMT)technologies on 4 ”GaAs substrates for both milli...
A 77-GHz automotive radar system for collision avoidance and intelligent cruise control has recently...
In this paper, we present the development of a W-band power amplifier (PA) circuit and a G-band low-...
A 94 GHz low-noise amplifier MMIC (LNA) has been developed, based on a coplanar technology utilizing...
In this paper, we present the development of advanced millimetre-wave and submillimeter-wave monolit...
Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4" GaAs substrates for both mill...
Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length wer...
For the next generation of sensors and communication systems operating at frequencies up to 600 GHz ...
In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic ...
We present a passivated 50 nm gate length metamorphic high electron mobility transistor (mHEMT) tech...
Two metamorphic InAlAs/InGaAs based high electron mobility transistor (MHEMT) technologies have been...