Measurements and Simulations of Hot-Carrier Degradation Effects in AlGaAs/GaAs HFETs
- Mazzanti, A.
- Verzellesi, G.
- Basile, A.F.
- Canali, C.
- Sozzi, G.
- Menozzi, R.
DOIAbstract
Hot-carrier degradation effects are investigated in AlGaAs/GaAs HFETs by coupling measurements and two-dimensional device simulations. It is shown that only a simultaneous, localised increase of defects at the gate-drain recess surface and channel-buffer interface can thoroughly account for the observed post-stress device behaviour in terms of drain saturation current decrease, reverse gate current increase, gate-lag enhancement
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