Residual stresses in titanium nitride thin films obtained with step variation of substrate bias voltage during deposition
- GOMEZ, A. G.
- RECCO, A. A. C.
- LIMA, N. B.
- MARTINEZ, L. G.
- Tschiptschin, Andre Paulo
- Souza, Roberto Martins de
DOIAbstract
In this work, a series of depositions of titanium nitride (TiN) films on M2 and D2 steel substrates were conducted in a Triode Magnetron Sputtering chamber. The temperature; gas flow and pressure were kept constant during each run. The substrate bias was either decreased or increased in a sequence of steps. Residual stress measurements were later conducted through the grazing X-ray diffraction method. Different incident angles were used in order to change the penetration depth and to obtain values of residual stress at different film depths. A model described by Dolle was adapted as an attempt to calculate the values of residual stress at each incident angle as a function of the value from each individual layer. Stress results indicated tha...
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