Investigation on InGaAs/InAlAs quantum cascade lasers.

Zhang, Q. S.
Liu, F. Q.
Zhang, Y. Z.
Wang, Z. G.
Gao, H. H.
Krier, A.

Publication date

January 2001

Abstract

The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The device has a reinforced ridge waveguide structure. The threshold current obtained at 80K is about 0.5A, an d the corresponding threshold current density is about 5kA/cm2

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Investigation on InGaAs/InAlAs quantum cascade lasers.

Abstract

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Investigation on InGaAs/InAlAs quantum cascade lasers.

Abstract

Extracted data

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