Powerful (light emitting diodes) LEDs which exhibit more than 3.5 mW of output power at room temperature have been fabricated by liquid phase epitaxy (LPE) and characterized. These LEDs are well matched to the CH4 absorption spectrum and confirm the potential of the devices as a key component for use in an infrared CH4 gas sensor. We report on the efficient interface electroluminescence in our LEDs across the InAs/InAsSbP heterojunction consistent with type II emission. This directly suppresses the Auger recombination and enables these sources to emit maximum powers in excess of 3 mW at room temperature. Furthermore, the use of Yb rare earth ion gettering in these devices was found to be effective in increasing the LED output power. We attr...
Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid p...
Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid p...
This paper briefly describes the fabrication of infrared light emitting diodes by liquid phase epita...
A new type of mid-infrared LED module (LEDM) operating at 3.8 mu m is reported. The device was produ...
Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power...
There is increasing interest in mid-infrared (mid-IR) light emitting diodes which operate in the 2-5...
We report on a powerful 4.6 mu m light emitting diode (LED), operating at room temperature, suitable...
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised ...
We report on a powerful 4.6 mu m light emitting diode (LED), operating at room temperature, suitable...
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised ...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX185672 / BLDSC - British Library D...
A mid-infrared light-emitting diode (LED) operating at 3.6 mum with a pulsed output power as high as...
We report on the superluminescence of an InAsSb light-emitting diode, operating at 4.6 mum, suitable...
Mid-infrared (3--6 {micro}m) LED`s are being developed for use in chemical sensor systems. As rich, ...
The use of a rare earth gettering technique for the growth of very pure InAs(Sb) epitaxial lavers of...
Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid p...
Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid p...
This paper briefly describes the fabrication of infrared light emitting diodes by liquid phase epita...
A new type of mid-infrared LED module (LEDM) operating at 3.8 mu m is reported. The device was produ...
Mid-infrared light emitting diodes which exhibit more than 7 mW (pulsed) and 0.35 mW dc output power...
There is increasing interest in mid-infrared (mid-IR) light emitting diodes which operate in the 2-5...
We report on a powerful 4.6 mu m light emitting diode (LED), operating at room temperature, suitable...
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised ...
We report on a powerful 4.6 mu m light emitting diode (LED), operating at room temperature, suitable...
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised ...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX185672 / BLDSC - British Library D...
A mid-infrared light-emitting diode (LED) operating at 3.6 mum with a pulsed output power as high as...
We report on the superluminescence of an InAsSb light-emitting diode, operating at 4.6 mum, suitable...
Mid-infrared (3--6 {micro}m) LED`s are being developed for use in chemical sensor systems. As rich, ...
The use of a rare earth gettering technique for the growth of very pure InAs(Sb) epitaxial lavers of...
Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid p...
Electroluminescence has been observed at 3.3 mum from InAs quantum well LEDs grown from the liquid p...
This paper briefly describes the fabrication of infrared light emitting diodes by liquid phase epita...