3-D numerical simulations of multi-gate MOSFETs

With transistors shrinking, problems such as short-channel effects are becoming a normal occurrence. In order to reduce this increase, and to obtain higher current drive, a good alternative is to implement the use of multiple-gate fully depleted SOI-MOSFET transistors. In this paper, we will show that these novel devices are able to overcome most of the problems and optimized operation can be obtained in the DC and AC regimes