Add to ORKGWe propose in this work a detailed analysis of the analog performance of 50-nm gate length finFETs in dynamic regime up to 110 GHz
The SOI FinFETs are considered as the most promising device for CMOS scaling down to 10 nm gate leng...
This study aims to understand the potential of bulk FinFET technology from the perspective of sub-an...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
This work analyzes the radio frequency (RF) performance of 60-nm gate length finFETs, for which the ...
This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance an...
FinFETs are known to be one of the most promising technological solutions to create high-performance...
In this paper, the first-ever published investigation on radio-frequency (RF) noise performance of F...
DC and RF characteristics of n-type FinFET transistor over a wide temperature range, from 77 to 473K...
As the scaling of the MOSFET increases due to Moore’s law the density of the circuits which are fabr...
This paper investigates the subthreshold behavior of Fin Field Effect Transistor (FinFET). The FinFE...
This work shows a comparison between the analog performance of standard and strained Si (sSOI) n-typ...
This review paper assesses the main approaches in the electrical characterization of advanced MOSFET...
This study aims to understand the potential of bulk FinFET technology from the perspective of sub- a...
The SOI FinFETs are considered as the most promising device for CMOS scaling down to 10 nm gate leng...
This study aims to understand the potential of bulk FinFET technology from the perspective of sub-an...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
This work analyzes the radio frequency (RF) performance of 60-nm gate length finFETs, for which the ...
This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance an...
FinFETs are known to be one of the most promising technological solutions to create high-performance...
In this paper, the first-ever published investigation on radio-frequency (RF) noise performance of F...
DC and RF characteristics of n-type FinFET transistor over a wide temperature range, from 77 to 473K...
As the scaling of the MOSFET increases due to Moore’s law the density of the circuits which are fabr...
This paper investigates the subthreshold behavior of Fin Field Effect Transistor (FinFET). The FinFE...
This work shows a comparison between the analog performance of standard and strained Si (sSOI) n-typ...
This review paper assesses the main approaches in the electrical characterization of advanced MOSFET...
This study aims to understand the potential of bulk FinFET technology from the perspective of sub- a...
The SOI FinFETs are considered as the most promising device for CMOS scaling down to 10 nm gate leng...
This study aims to understand the potential of bulk FinFET technology from the perspective of sub-an...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...