In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to Improve the radiation hardness of silicon detectors up to fluences of 1016n/cm2. In this work the simulated electrical characteristics of Irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of 1016n/cm2 shows better results In term of charge collection efficiency using a p-type silicon detector
The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neut...
In this work we propose the application of a radiation damage model based on the introduction of dee...
Abstract In this paper the results of Edge-TCT and I-V measurements with passive te...
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed...
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed...
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed...
In this work we propose the application of an enhanced radiation damage model based on the introduct...
This thesis describes the development of advanced silicon radiation detectors and their characteriza...
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-L...
A comparative study of the radiation hardness of silicon pad detectors, manufactured from Float-Zone...
Various new configurations (n{sup +}/p/p{sup +}, n{sup +}/n/p{sup +}, and p{sup +}/n/n{sup +}) of si...
We propose a new guard ring geometry for n-on-p silicon particle detectors for high ...
In the framework of the CERN-RD50 and INFN-SMART collaboration, we have investigated the possibility...
This thesis describes the production and characterisation of silicon microstrip detectors and test s...
Active silicon detectors built on p-type substrate are a promising technological solution for large ...
The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neut...
In this work we propose the application of a radiation damage model based on the introduction of dee...
Abstract In this paper the results of Edge-TCT and I-V measurements with passive te...
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed...
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed...
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed...
In this work we propose the application of an enhanced radiation damage model based on the introduct...
This thesis describes the development of advanced silicon radiation detectors and their characteriza...
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-L...
A comparative study of the radiation hardness of silicon pad detectors, manufactured from Float-Zone...
Various new configurations (n{sup +}/p/p{sup +}, n{sup +}/n/p{sup +}, and p{sup +}/n/n{sup +}) of si...
We propose a new guard ring geometry for n-on-p silicon particle detectors for high ...
In the framework of the CERN-RD50 and INFN-SMART collaboration, we have investigated the possibility...
This thesis describes the production and characterisation of silicon microstrip detectors and test s...
Active silicon detectors built on p-type substrate are a promising technological solution for large ...
The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neut...
In this work we propose the application of a radiation damage model based on the introduction of dee...
Abstract In this paper the results of Edge-TCT and I-V measurements with passive te...