The transport properties of domain walls in oxygen deficient multiferroic YMnO3 single crystals have been probed using conductive atomic force microscopy and piezoresponse force microscopy. Domain walls exhibit significantly enhanced conductance after being poled in electric fields, possibly induced by oxygen vacancy ordering at domain walls. The electronic conduction can be understood by the Schottky emission and Fowler-Nordheim tunnelling mechanisms. Our results show that the domain wall conductance can be modulated through band structure engineering by manipulating ordered oxygen vacancies in the poling fields
We have investigated the origin of the dielectric relaxation in YMnO3 single crystals. Two distinct ...
Improper ferroelectrics are described by two order parameters: a primary one, driving a transition t...
Domain walls may play an important role in future electronic devices, given their small size as well...
We have investigated the structural, magnetic, and ferroelectric properties of magnetically frustrat...
Domain walls are attracting significant interest in the field of (multi-)ferroic materials owing to ...
We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topolog...
We have investigated the structural, magnetic, and ferroelectric properties of magnetically frustrat...
We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by p...
Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr...
We use density functional calculations to investigate the accommodation and migration of oxygen vaca...
BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogo...
We investigate the effect of chemical doping on the electric and magnetic domain pattern in multifer...
Transition metal oxides hold great potential for the development of new device paradigms because of ...
Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr...
Local conduction at domains and domain walls is investigated in BiFeO3 thin films containing mostly ...
We have investigated the origin of the dielectric relaxation in YMnO3 single crystals. Two distinct ...
Improper ferroelectrics are described by two order parameters: a primary one, driving a transition t...
Domain walls may play an important role in future electronic devices, given their small size as well...
We have investigated the structural, magnetic, and ferroelectric properties of magnetically frustrat...
Domain walls are attracting significant interest in the field of (multi-)ferroic materials owing to ...
We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topolog...
We have investigated the structural, magnetic, and ferroelectric properties of magnetically frustrat...
We report a unipolar, nonvolatile resistive switching in polycrystalline YMnO3 thin films grown by p...
Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr...
We use density functional calculations to investigate the accommodation and migration of oxygen vaca...
BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogo...
We investigate the effect of chemical doping on the electric and magnetic domain pattern in multifer...
Transition metal oxides hold great potential for the development of new device paradigms because of ...
Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr...
Local conduction at domains and domain walls is investigated in BiFeO3 thin films containing mostly ...
We have investigated the origin of the dielectric relaxation in YMnO3 single crystals. Two distinct ...
Improper ferroelectrics are described by two order parameters: a primary one, driving a transition t...
Domain walls may play an important role in future electronic devices, given their small size as well...