In recent years, the terahertz plasma effects in high-mobility electronic systems have attracted much attention theoretically and experimentally. Plasma excitation in the terahertz regime can be used for generation, detection, and frequency multiplication of terahertz radiation. A channel of a field-effect transistor with sufficiently high electron mobility can serve as a resonant cavity for the plasma oscillation. When the signal period is in the vicinity of the electron transit time, self-excitation of plasma oscillation can occur. If the typical plasma frequency is in the terahertz regime, the phenomenon can be used as a terahertz source
In this work, we investigated the magnetotransport under terahertz radiation in high-mobility two-di...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
GaAs/ALGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electroma...
The channel of the field effect transistor can operate as a cavity for plasma waves. For the electro...
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can r...
Abstract. Plasma waves are oscillations of electron density in time and space, and in deep submicron...
Plasma waves are oscillations of electron density in time and space, and in deep submicron field eff...
We studied an unrevealed characteristic of radiation emission from a localized plasma oscillator (pl...
The current flowing in two-dimensional channel of field effect transistors can generate different ty...
This is an overview of the main physical ideas for application of field effect transistors for gener...
Detection of terahertz radiation by two dimensional electron plasma in high electron mobility GaAs/G...
The dispersion and intensity of coupled plasma excitation in an electron-hole bilayer with Rashba sp...
The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the ...
International audienceDetection of THz radiation by a Field Effect Transistor InGaAs/InAlAs transist...
We present experimental results of THz detection signal dependence on the magnetic field. THz radiat...
In this work, we investigated the magnetotransport under terahertz radiation in high-mobility two-di...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
GaAs/ALGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electroma...
The channel of the field effect transistor can operate as a cavity for plasma waves. For the electro...
The high electron mobility transistors can act as a resonator cavity for the plasma waves that can r...
Abstract. Plasma waves are oscillations of electron density in time and space, and in deep submicron...
Plasma waves are oscillations of electron density in time and space, and in deep submicron field eff...
We studied an unrevealed characteristic of radiation emission from a localized plasma oscillator (pl...
The current flowing in two-dimensional channel of field effect transistors can generate different ty...
This is an overview of the main physical ideas for application of field effect transistors for gener...
Detection of terahertz radiation by two dimensional electron plasma in high electron mobility GaAs/G...
The dispersion and intensity of coupled plasma excitation in an electron-hole bilayer with Rashba sp...
The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the ...
International audienceDetection of THz radiation by a Field Effect Transistor InGaAs/InAlAs transist...
We present experimental results of THz detection signal dependence on the magnetic field. THz radiat...
In this work, we investigated the magnetotransport under terahertz radiation in high-mobility two-di...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
GaAs/ALGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electroma...