Non-equilibrium charge carriers recombination, diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers

Petrauskas, Mindaugas
Juodkazis, Saulius
Willander, Magnus
Quacha, Aziz

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Publication date

January 1993

DOI

10.1117/12.162765

Publisher

SPIE - International Society for Optical Engineering

Abstract

The method of picosecond laser induced grating (LIG) was used for investigation of non- equilibrium charge carriers (NCC) dynamics in the epitaxial layers of InGaAsP and InGaAs. The carriers recombination time (tau) R and diffusion coefficient Da have been determined. The influence of bleaching on the revealed values is discussed

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Non-equilibrium charge carriers recombination, diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers

Abstract

Extracted data

Non-equilibrium charge carriers recombination, diffusion peculiarities and bleaching in InGaAs(P) epitaxial layers

Abstract

Extracted data

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