In this review, we discuss first some of the recent works to reveal properties of conventional ZnO/ZnMgO QWs grown c-axis oriented. This will include the properties of the quantum confined Stark effect (QCSE) that results from the internal electric field in the unit cell. We will then discuss various unconventional QW growths, including non-polar ZnO QWs, graded barrier QWs and double QWs. We finish with a review of current progress towards light emitting devices based on ZnO/ZnMgO QWs
ZnO/Zn0.8Mg0.2O multiple-quantum-well (MQW) nanorods with a different number of periods and well wid...
The development of optoelectronic devices based on highly-promising Zn1 - xCdxO semiconductor system...
International audienceIntersubband transitions in ZnO material systems are predicted to be promising...
In this review, we discuss first some of the recent works to reveal properties of conventional ZnO/Z...
Abstract: This paper reviews the optical properties of ZnO/(Zn, Mg)O single quantum wells grown by m...
Quantum wells with graded barriers are demonstrated as a means to control both the transition energy...
International audienceWe report on the optical spectroscopy of a series of ZnO/(Zn, Mg)O quantum wel...
International audienceContinuous-wave, time-integrated, and time-resolved photoluminescence experime...
The ZnOZn 0.85Mg 0.15O multiple quantum wells (MQWs) were fabricated on Si(111) substrates by plasma...
In this work we present a comparative study of Zn-face and O-face polarity Zn1 - xCdxO-based convent...
Zinc oxide is a wide gap semiconductor (≈ 3.4 eV) which one of the main advantages is a large excito...
Abstract—The optical gain and the luminescence of a ZnO quantum well with MgZnO barriers is studied ...
Polar c-axis oriented Zn0.75Cd0.25O/ZnO multiple quantum wells (MQWs), grown by pulsed-laser deposit...
International audienceThis paper reports on the demonstration of quantum cascade detectors (QCDs) ba...
We review recent work studying the dynamics in zinc oxide quantum wells (QWs) using ultrafast optica...
ZnO/Zn0.8Mg0.2O multiple-quantum-well (MQW) nanorods with a different number of periods and well wid...
The development of optoelectronic devices based on highly-promising Zn1 - xCdxO semiconductor system...
International audienceIntersubband transitions in ZnO material systems are predicted to be promising...
In this review, we discuss first some of the recent works to reveal properties of conventional ZnO/Z...
Abstract: This paper reviews the optical properties of ZnO/(Zn, Mg)O single quantum wells grown by m...
Quantum wells with graded barriers are demonstrated as a means to control both the transition energy...
International audienceWe report on the optical spectroscopy of a series of ZnO/(Zn, Mg)O quantum wel...
International audienceContinuous-wave, time-integrated, and time-resolved photoluminescence experime...
The ZnOZn 0.85Mg 0.15O multiple quantum wells (MQWs) were fabricated on Si(111) substrates by plasma...
In this work we present a comparative study of Zn-face and O-face polarity Zn1 - xCdxO-based convent...
Zinc oxide is a wide gap semiconductor (≈ 3.4 eV) which one of the main advantages is a large excito...
Abstract—The optical gain and the luminescence of a ZnO quantum well with MgZnO barriers is studied ...
Polar c-axis oriented Zn0.75Cd0.25O/ZnO multiple quantum wells (MQWs), grown by pulsed-laser deposit...
International audienceThis paper reports on the demonstration of quantum cascade detectors (QCDs) ba...
We review recent work studying the dynamics in zinc oxide quantum wells (QWs) using ultrafast optica...
ZnO/Zn0.8Mg0.2O multiple-quantum-well (MQW) nanorods with a different number of periods and well wid...
The development of optoelectronic devices based on highly-promising Zn1 - xCdxO semiconductor system...
International audienceIntersubband transitions in ZnO material systems are predicted to be promising...
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