Electrical Characterization of Ion Implantation into GaAs

Recent advances in the characterization of ion‐implanted samples have included whole wafer mapping (topography) and depth profiling techniques. We review several methods for mapping electrical parameters, including the dark‐spot resistance (DSR), and the microwave photoconductance techniques. In addition, we suggest a new photo‐Hall technique which would allow mobility and carrier‐concentration mapping as well as that of resistivity . Finally, we review methods for obtaining ρ, μ, and depth profiles, with particular emphasis on the application of the magnetoresistance techniques in actual field‐effect transistor structures