Add to ORKGMolecular-beam epitaxial GaAs layers, grown at 200 or 400-degrees-C, show great promise as passivating or insulating films on top of standard n-type MESFET layers (n congruent-to 1.6 x 10(17) cm-3) grown at normal temperatures (580-600-degrees-C). Here we show that ohmic contacts, with specific contact resistances of 10(-6) OMEGA.cm2, are easily fabricated without removing the cap layers. Preliminary results on capped p-type MESFET layers (p congruent-to 1.5 x 10(17) cm-3) suggest that a 200-degrees cap may degrade the contact resistance by a factor of 3-10
This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...
We demonstrate the effect of SF6 plasma passivation with a ZnO interlayer in a metal-interlayer-semi...
A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n‐type conductive ...
Molecular-beam epitaxial GaAs layers, grown at 200 or 400-degrees-C, show great promise as passivati...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
Low-temperature-grown gallium-arsenide (LTG : GaAs), typically grown between 200°C and 300° C, has h...
Ex situ nonalloyed ohmic contacts were made to n- and p‐type GaAs using low‐temperature molecular be...
Nonalloyed Ti/Pt/Au contacts to heavily doped p-GaAs have been fabricated using effective cleaning o...
The effect of existence of undoped GaAs/AlGaAs cap layers on Ohmic contact resistivity in an AlGaAs/...
A low-temperature process for forming ohmic contacts to moderately doped GaAs has been optimized usi...
Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs have been develo...
Previous attempts to passivate the n‐type (100)GaAs surface have significantly reduced only the surf...
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration i...
Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The pap...
Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs gr...
This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...
We demonstrate the effect of SF6 plasma passivation with a ZnO interlayer in a metal-interlayer-semi...
A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n‐type conductive ...
Molecular-beam epitaxial GaAs layers, grown at 200 or 400-degrees-C, show great promise as passivati...
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C wa...
Low-temperature-grown gallium-arsenide (LTG : GaAs), typically grown between 200°C and 300° C, has h...
Ex situ nonalloyed ohmic contacts were made to n- and p‐type GaAs using low‐temperature molecular be...
Nonalloyed Ti/Pt/Au contacts to heavily doped p-GaAs have been fabricated using effective cleaning o...
The effect of existence of undoped GaAs/AlGaAs cap layers on Ohmic contact resistivity in an AlGaAs/...
A low-temperature process for forming ohmic contacts to moderately doped GaAs has been optimized usi...
Thermally stable, low-resistance PdGe-based ohmic contacts to high-low doped n-GaAs have been develo...
Previous attempts to passivate the n‐type (100)GaAs surface have significantly reduced only the surf...
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration i...
Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The pap...
Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs gr...
This work refers basically to the detailed understanding of the natural phenomena in real tunneling ...
We demonstrate the effect of SF6 plasma passivation with a ZnO interlayer in a metal-interlayer-semi...
A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n‐type conductive ...