A simple experiment involving only the measurement of dark current Idark and 1.1 μm photocurrent IPC in semi‐insulating (SI) GaAs allows an accurate determination of the electron capture cross section σn for the important defect EL2 in GaAs. For 45 SI GaAs samples, from 12 different boules, grown by three different techniques, we find that IPC/Idark=1.96±0.05 at 300 K. This relationship gives σn=1.4±0.4×10−16 cm2, which is compared to previously estimated values
We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to ass...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
Abstract. In the present work, we study the influence of small energy α-particles (0.96 MeV) on the ...
A simple experiment involving only the measurement of dark current Idark and 1.1 μm photocurrent IPC...
A rigorous formulation of capacitance changes during trap filling processes is presented and used to...
A simple method is described for the determination of the electron capture cross-section at the impe...
We have measured the electron optical capture cross section, σ0n(hν), of EL2 (the most important nat...
Heating of electrons by electric fields smaller than that required for generation of domain oscillat...
A method is presented, which combines optical excitation and electrical refilling of deep levels, al...
Recently, the accuracy and reliability of the accepted (0/+) donor energy level E-D of the defect EL...
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
We report the effects associated with the transition of the EL2 defect to its metastable state EL2* ...
Combining deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), optical ...
The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulatin...
The performance of Schottky contact semiconductor radiation detectors fabricated from semi‐insulatin...
We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to ass...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
Abstract. In the present work, we study the influence of small energy α-particles (0.96 MeV) on the ...
A simple experiment involving only the measurement of dark current Idark and 1.1 μm photocurrent IPC...
A rigorous formulation of capacitance changes during trap filling processes is presented and used to...
A simple method is described for the determination of the electron capture cross-section at the impe...
We have measured the electron optical capture cross section, σ0n(hν), of EL2 (the most important nat...
Heating of electrons by electric fields smaller than that required for generation of domain oscillat...
A method is presented, which combines optical excitation and electrical refilling of deep levels, al...
Recently, the accuracy and reliability of the accepted (0/+) donor energy level E-D of the defect EL...
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
We report the effects associated with the transition of the EL2 defect to its metastable state EL2* ...
Combining deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), optical ...
The performance of Schottky contact semiconductor radiation detectors fabricated from semi-insulatin...
The performance of Schottky contact semiconductor radiation detectors fabricated from semi‐insulatin...
We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to ass...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
Abstract. In the present work, we study the influence of small energy α-particles (0.96 MeV) on the ...
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