Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) imaging of the freestanding n-GaN samples grown by hydride vapor phase epitaxy were made. Dark-spot defects in plan-view EBIC and MCL images and dark line defects in MCL images taken on the cleaved surface of the samples could be associated with dislocations. MCL spectra measurements in the vicinity of dislocations and in the matrix do not reveal specific luminescence bands that could be attributed to dislocations but rather suggest that dislocation regions have higher density of deep nonradiative traps
Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders ...
Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phas...
The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...
Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) im...
Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) im...
Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) im...
We combine two scanning electron microscopy techniques to investigate the influence of dislocations ...
Cathodoluminescence technique combined with transmission electron microscopy (TEM-CL) has been used ...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
Deep level electron and hole traps were studied by means of deep level transient spectroscopy with e...
Deep level electron and hole traps were studied by means of deep level transient spectroscopy with e...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders o...
The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...
Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders ...
Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phas...
The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...
Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) im...
Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) im...
Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) im...
We combine two scanning electron microscopy techniques to investigate the influence of dislocations ...
Cathodoluminescence technique combined with transmission electron microscopy (TEM-CL) has been used ...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
Deep level electron and hole traps were studied by means of deep level transient spectroscopy with e...
Deep level electron and hole traps were studied by means of deep level transient spectroscopy with e...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
The aim of the project is the study of the role and the distribution of extended defects in thin fil...
Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders o...
The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...
Light emitting diodes and blue laser diodes grown on GaN have been demonstrated despite six orders ...
Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phas...
The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...