Add to ORKGInfrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half-millimeter resolution plots of EL2 density and dislocation density are shown to correlate with plots of saturation current in MESFET devices at an early stage of fabrication
The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are e...
International audienceIn this paper, the simultaneous measurement of out-of-plane thermal diffusivit...
The adherence of metallic multilayers in III-V compound devices (W-Mo-Ge deposited on Ga As substrat...
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half...
Two optical topographical methods for homogeneity control of GaAs wafers are presented. The first on...
AbstractInfrared transmission topography has long been used to detect variations in gallium arsenide...
[[abstract]]We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in und...
A technique for automated measurement of whole-wafer etch pit density (EPD) for GaAs wafers is prese...
We demonshate the use of an infrared focal plane array (IR-FPA) to measure the spatially-resolved su...
We have compared the strain data in GaAs wafers, as-grown as well as annealed, determined by means o...
Different factors influencing the accuracy of quantitative EL2 mapping were analyzed. It was found t...
The mesoscopic inhomogencity of LEC grown semi-insulating (SI) GaAs wafers has been investigated wit...
A survey of material characterization techniques used to support and to control the fabrication of G...
Two optical topographical methods will be described. Results for as-grown, whole-ingot annealed, ion...
To date, photo-luminescence (PL) imaging of GaAs wafers affords the only non-contact and non-destruc...
The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are e...
International audienceIn this paper, the simultaneous measurement of out-of-plane thermal diffusivit...
The adherence of metallic multilayers in III-V compound devices (W-Mo-Ge deposited on Ga As substrat...
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half...
Two optical topographical methods for homogeneity control of GaAs wafers are presented. The first on...
AbstractInfrared transmission topography has long been used to detect variations in gallium arsenide...
[[abstract]]We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in und...
A technique for automated measurement of whole-wafer etch pit density (EPD) for GaAs wafers is prese...
We demonshate the use of an infrared focal plane array (IR-FPA) to measure the spatially-resolved su...
We have compared the strain data in GaAs wafers, as-grown as well as annealed, determined by means o...
Different factors influencing the accuracy of quantitative EL2 mapping were analyzed. It was found t...
The mesoscopic inhomogencity of LEC grown semi-insulating (SI) GaAs wafers has been investigated wit...
A survey of material characterization techniques used to support and to control the fabrication of G...
Two optical topographical methods will be described. Results for as-grown, whole-ingot annealed, ion...
To date, photo-luminescence (PL) imaging of GaAs wafers affords the only non-contact and non-destruc...
The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are e...
International audienceIn this paper, the simultaneous measurement of out-of-plane thermal diffusivit...
The adherence of metallic multilayers in III-V compound devices (W-Mo-Ge deposited on Ga As substrat...