Add to ORKGMolecular‐beam‐epitaxial GaAs grown at 200 °C has an extremely high (≳1019 cm−3) concentration of AsGa defects and, after an anneal at 550–600 °C, a high concentration of As precipitates. The relative roles of the AsGa defects and As precipitates in compensation and conductivity is controversial. Here criteria are developed to distinguish between two existing models
A novel theoretical investigation is employed to study the influence of surface dynamics in low temp...
We have grown a multilayer structure of GaAs and Al xGa 1-xAs (x = 0.25) by molecular beam epitaxy a...
We have investigated the structural and defect characteristics of GaAs and Al xGa 1-xAs grown at low...
Molecular‐beam‐epitaxial GaAs grown at 200 °C has an extremely high (≳1019 cm−3) concentration of As...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs gr...
Recently we have reproducibly grown vapor-phase epitaxial GaAs, with less than 10% compensation, in ...
[[abstract]]A pump-probe study of GaAs grown by molecular beam epitaxy at low temperatures (LT-GaAs)...
Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to...
Molecular beam epitaxy (MBE) GaAs layers grown at substrate temperatures of 200-400-degrees-C, well ...
Nearly stoichiometeric GaAs epilayers doped with Si or Be were grown by molecular beam epitaxy at a ...
By far, the largest thermally stimulated current trap in molecular beam epitaxial GaAs grown at 200–...
We have grown a multilayer structure of GaAs and AlxGa1-xAs (x = 0.25) by molecular beam epitaxy at ...
The electrical conductivity of GaAs layers grown by molecular-beam epitaxy at low temperatures was s...
We use the Hall effect and a new charge-transfer technique to study molecular beam epitaxial GaAs gr...
A novel theoretical investigation is employed to study the influence of surface dynamics in low temp...
We have grown a multilayer structure of GaAs and Al xGa 1-xAs (x = 0.25) by molecular beam epitaxy a...
We have investigated the structural and defect characteristics of GaAs and Al xGa 1-xAs grown at low...
Molecular‐beam‐epitaxial GaAs grown at 200 °C has an extremely high (≳1019 cm−3) concentration of As...
By separating a 2‐μm‐thick molecular‐beam‐epitaxial GaAs layer grown at 200 °C from its 650‐μm‐thick...
Different conduction behavior is observed in nonstoichiometric ~NS! molecular-beam epitaxial GaAs gr...
Recently we have reproducibly grown vapor-phase epitaxial GaAs, with less than 10% compensation, in ...
[[abstract]]A pump-probe study of GaAs grown by molecular beam epitaxy at low temperatures (LT-GaAs)...
Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to...
Molecular beam epitaxy (MBE) GaAs layers grown at substrate temperatures of 200-400-degrees-C, well ...
Nearly stoichiometeric GaAs epilayers doped with Si or Be were grown by molecular beam epitaxy at a ...
By far, the largest thermally stimulated current trap in molecular beam epitaxial GaAs grown at 200–...
We have grown a multilayer structure of GaAs and AlxGa1-xAs (x = 0.25) by molecular beam epitaxy at ...
The electrical conductivity of GaAs layers grown by molecular-beam epitaxy at low temperatures was s...
We use the Hall effect and a new charge-transfer technique to study molecular beam epitaxial GaAs gr...
A novel theoretical investigation is employed to study the influence of surface dynamics in low temp...
We have grown a multilayer structure of GaAs and Al xGa 1-xAs (x = 0.25) by molecular beam epitaxy a...
We have investigated the structural and defect characteristics of GaAs and Al xGa 1-xAs grown at low...