Add to ORKGIn the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is sometimes observed. The activation energy and capture cross section of T-a are 0.43 eV and 3.7 x 10(-15) cm(2), respectively. Based on a good correlation with the Cu-related photoluminescence emission at 1.36 eV and the Cu-related deep level transient spectroscopy hole traps HL4 and HB4, we argue that T-a is a Cu-related hole-trap
The features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaA...
Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated curren...
A method is presented, which combines optical excitation and electrical refilling of deep levels, al...
In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is so...
By far, the largest thermally stimulated current trap in molecular beam epitaxial GaAs grown at 200–...
Two traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insu...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
The role of contacts in characterization of traps in semi-insulating (SI) GaAs by thermally stimulat...
Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have be...
A well-established characterization method for investigating deep traps in semi-insulating (SI) GaAs...
The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using the...
Experiments show that in both GaAs diffused with copper and GaAs heating treatment a photoluminescen...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
A method for analyzing the isothermal capacitance transience is suggested, which is referred to as t...
The features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaA...
Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated curren...
A method is presented, which combines optical excitation and electrical refilling of deep levels, al...
In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is so...
By far, the largest thermally stimulated current trap in molecular beam epitaxial GaAs grown at 200–...
Two traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insu...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
The role of contacts in characterization of traps in semi-insulating (SI) GaAs by thermally stimulat...
Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have be...
A well-established characterization method for investigating deep traps in semi-insulating (SI) GaAs...
The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using the...
Experiments show that in both GaAs diffused with copper and GaAs heating treatment a photoluminescen...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
A method for analyzing the isothermal capacitance transience is suggested, which is referred to as t...
The features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaA...
Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated curren...
A method is presented, which combines optical excitation and electrical refilling of deep levels, al...