Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderate (100-300degreesC) temperatures. Incorporation depths of \u3e25 mum were obtained in 0.5 h at 300degreesC, producing a diffusivity of similar to8 x 10(-10) cm(2)/V s at this temperature. The activation energy for diffusion is 0.17 +/- 0.12 eV, indicating an interstitial mechanism. Subsequent annealing at 500-600 degreesC is sufficient to evolve all of the hydrogen out of the ZnO, at least to the sensitivity of Secondary Ion Mass Spectrometry (10(15) cm(-3)). The thermal stability of hydrogen retention is slightly greater when the hydrogen is incorporated by direct implantation relative to plasma exposure, due to trapping at residual damage. ...
The optical absorptance and photoluminescence studies has been applied on the hydrogen and oxygen pl...
The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford...
University of Technology, Sydney. Faculty of Science.ZnO is a semiconductor with a direct band gap o...
Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderat...
Hydrogen incorporation depths of \u3e25 μm were obtained in bulk, single-crystal ZnO during exposure...
Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderat...
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally...
Hydrothermally grown n-type ZnO bulk samples have been implanted with protons and deuterium ions to ...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...
An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondar...
The formation and evolution of the prominent and so-called E3 center in ZnO has been studied by in-s...
We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO ...
The doping properties and stability of hydrogen in zinc oxide (ZnO) crystals have been investigated ...
Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water....
We have studied the effects of remote hydrogen plasma treatment on the defect characteristics in sin...
The optical absorptance and photoluminescence studies has been applied on the hydrogen and oxygen pl...
The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford...
University of Technology, Sydney. Faculty of Science.ZnO is a semiconductor with a direct band gap o...
Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderat...
Hydrogen incorporation depths of \u3e25 μm were obtained in bulk, single-crystal ZnO during exposure...
Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderat...
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally...
Hydrothermally grown n-type ZnO bulk samples have been implanted with protons and deuterium ions to ...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...
An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondar...
The formation and evolution of the prominent and so-called E3 center in ZnO has been studied by in-s...
We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO ...
The doping properties and stability of hydrogen in zinc oxide (ZnO) crystals have been investigated ...
Zinc oxide (ZnO) thin films were grown by atomic layer deposition using diethylzinc (DEZ) and water....
We have studied the effects of remote hydrogen plasma treatment on the defect characteristics in sin...
The optical absorptance and photoluminescence studies has been applied on the hydrogen and oxygen pl...
The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford...
University of Technology, Sydney. Faculty of Science.ZnO is a semiconductor with a direct band gap o...