Add to ORKGA dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a temperature of similar to 835 degrees C. The as-grown sample, and the same sample annealed at 830 degrees C, show a single dominant donor-bound-exciton (D-0, X) emission line. After annealing at similar to 835 degrees C, the emission evolves into at least four broader emission lines. increasing the annealing temperature to 840 degrees C reverses the emission spectrum back to the single D-0, X line. Repeating the 835 degrees C anneal again produces the evolved spectrum. We propose a model that can account for all of the spectral lines that are generated by the 835 degrees C anneal. We also suggest some possible explanations for the dramatic c...
In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to ...
GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, ...
GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, ...
A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a...
A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a...
Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperatu...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
A 10 nm thick epitaxially grown AIN cap has been used to protect the surface of a GaN epilayer both ...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
We report the investigation of temperature and excitation power dependence in photoluminescence spec...
This work discusses the temperature behavior of the various photoluminescence (PL) transitions obser...
Photoluminescence (PL) in GaN or InGaN layers monitored during epitaxial growth at high temperatures...
The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both gro...
The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both gro...
The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the pro...
In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to ...
GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, ...
GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, ...
A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a...
A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a...
Photoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperatu...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
A 10 nm thick epitaxially grown AIN cap has been used to protect the surface of a GaN epilayer both ...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
We report the investigation of temperature and excitation power dependence in photoluminescence spec...
This work discusses the temperature behavior of the various photoluminescence (PL) transitions obser...
Photoluminescence (PL) in GaN or InGaN layers monitored during epitaxial growth at high temperatures...
The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both gro...
The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both gro...
The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the pro...
In this paper we account for the physics behind the exciton peak shift in GaN nanorods (NRs) due to ...
GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, ...
GaN epilayers grown by MOCVD were implanted with Tm and Eu under different implantation conditions, ...