Molecular-beam-epitaxial GaAs grown at very low temperatures (∼200 °C) exhibits anomalous Hall-effect properties. Here we show conclusively that the room-temperature conduction is due to activated (nearest-neighbor) hopping in a deep defect band of concentration 3×1019 cm-3, and energy Ec-0.75 eV, along with conduction due to free carriers thermally excited from this band. At low measurement temperatures, variable-range hopping [σ∝exp(-T0/T)1/4] prevails. The conduction-band mobility can be well explained by neutral-deep-donor scattering in parallel with lattice scattering
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C)...
The dark current at 82 K, in GaAs layers grown by molecular-beam epitaxy at 200 °C and annealed at 5...
It is shown that the observed quantum Hall effect in epitaxial layers of heavily doped n-type GaAs w...
Molecular-beam-epitaxial GaAs grown at very low temperatures (∼200 °C) exhibits anomalous Hall-effec...
Conductivity and Hall effect measurements have been performed on 2 μm thick molecular beam epitaxial...
Conductivity and Hall effect measurements have been performed on 2 μm thick molecular beam epitaxial...
As the growth temperature of molecular beam epitaxial GaAs is increased from 250 to 400 degrees C, t...
As the growth temperature of molecular beam epitaxial GaAs is increased from 250 to 400 degrees C, t...
This Article is brought to you for free and open access by the Physics at CORE Scholar. It has been ...
The electrical conductivity of GaAs layers grown by molecular-beam epitaxy at low temperatures was s...
We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 oC, ...
We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 oC, ...
We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 oC, ...
We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 oC, ...
We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with th...
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C)...
The dark current at 82 K, in GaAs layers grown by molecular-beam epitaxy at 200 °C and annealed at 5...
It is shown that the observed quantum Hall effect in epitaxial layers of heavily doped n-type GaAs w...
Molecular-beam-epitaxial GaAs grown at very low temperatures (∼200 °C) exhibits anomalous Hall-effec...
Conductivity and Hall effect measurements have been performed on 2 μm thick molecular beam epitaxial...
Conductivity and Hall effect measurements have been performed on 2 μm thick molecular beam epitaxial...
As the growth temperature of molecular beam epitaxial GaAs is increased from 250 to 400 degrees C, t...
As the growth temperature of molecular beam epitaxial GaAs is increased from 250 to 400 degrees C, t...
This Article is brought to you for free and open access by the Physics at CORE Scholar. It has been ...
The electrical conductivity of GaAs layers grown by molecular-beam epitaxy at low temperatures was s...
We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 oC, ...
We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 oC, ...
We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 oC, ...
We have performed Hall-effect and conductivity measurements on MBE GaAs layers grown at 200-400 oC, ...
We investigate the magnetoresistance of epitaxially grown, heavily doped n-type GaAs layers with th...
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C)...
The dark current at 82 K, in GaAs layers grown by molecular-beam epitaxy at 200 °C and annealed at 5...
It is shown that the observed quantum Hall effect in epitaxial layers of heavily doped n-type GaAs w...
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