Add to ORKGThe structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecular beam epitaxy are studied. Suitable substrate preparation and growth conditions are found to greatly improve the structural quality of the films. Threading dislocation densities of about 3 x 10(9) cm(-2) for edge dislocations and \u3c 1 x 10(6) cm(-2) for screw dislocations are achieved in GaN films of 0.8 m thickness. Mechanisms of dislocation generation and annihilation are discussed. Increasing the Ga to N flux ratio used during growth is found to improve the surface morphology, An unintentional electron concentration in the films of about 5 x 10(17) cm(-3) is observed, and is attributed to excess Si in the films due to a Si-cleaning st...
One of the major hurdles in the epitaxial growth of high quality GaN thin films is the unavailabilit...
A detailed study of the characteristics of undoped GaN films, grown on either vicinal or nominal fla...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable s...
Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) subs...
Optical devices based on III-V nitrides operating in the visible region involve GaN based materials....
We have investigated the optimal conditions for molecular beam epitaxial growth of high quality GaN ...
The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We perfo...
The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We perfo...
We have grown GaN on porous SiC substrates and studied the effect of substrate porosity on the overg...
We have explored the growth of GaN on porous SiC substrates by plasma-assisted molecular beam epitax...
One of the major hurdles in the epitaxial growth of high quality GaN thin films is the unavailabilit...
One of the major hurdles in the epitaxial growth of high quality GaN thin films is the unavailabilit...
A detailed study of the characteristics of undoped GaN films, grown on either vicinal or nominal fla...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
The structural, electrical, and optical properties of GaN grown on 6H-SiC(0001) substrates by molecu...
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable s...
Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) subs...
Optical devices based on III-V nitrides operating in the visible region involve GaN based materials....
We have investigated the optimal conditions for molecular beam epitaxial growth of high quality GaN ...
The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We perfo...
The Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We perfo...
We have grown GaN on porous SiC substrates and studied the effect of substrate porosity on the overg...
We have explored the growth of GaN on porous SiC substrates by plasma-assisted molecular beam epitax...
One of the major hurdles in the epitaxial growth of high quality GaN thin films is the unavailabilit...
One of the major hurdles in the epitaxial growth of high quality GaN thin films is the unavailabilit...
A detailed study of the characteristics of undoped GaN films, grown on either vicinal or nominal fla...
Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in si...