Add to ORKGTransmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n+‐GaAs wafers (n≂1–2×1018 cm-3) correlate well with carrier concentration n, measured by the Hall effect, and dislocation density, as confirmed by KOH etch‐pit patterns. The absorption for λ≳1.0 μm (below band edge) varies directly with n via free‐carrier interconduction‐band transitions, while the absorption for λ≲0.95 μm (near band edge) varies inversely with n because of band‐filling effects. Both phenomena are highly useful for n+‐GaAs wafer characterization
The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentration...
Different factors influencing the accuracy of quantitative EL2 mapping were analyzed. It was found t...
[[abstract]]A pump-probe study of GaAs grown by molecular beam epitaxy at low temperatures (LT-GaAs)...
Transmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n+‐GaAs wafe...
In an earlier paper [P.J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller, M. Jurisch, Eu...
In an earlier paper [P.J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller, M. Jurisch, Eu...
We present an optical technique based on absorption measurements for the determination of the charge...
We present an optical technique based on absorption measurements for the determination of the charg...
To date, photo-luminescence (PL) imaging of GaAs wafers affords the only non-contact and non-destruc...
Wafers cut from Si-doped vertical gradient freeze (VGF) GaAs crystals with silicon concentration var...
Supplemental MaterialDoping is a fundamental property of semiconductors and constitutes the basis of...
International audienceDoping is a fundamental property of semiconductors and constitutes the basis o...
The neutral deep-donor density [EL2]0, and dislocation density, ρ D, are measured on adjacent, semi-...
The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are e...
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectron...
The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentration...
Different factors influencing the accuracy of quantitative EL2 mapping were analyzed. It was found t...
[[abstract]]A pump-probe study of GaAs grown by molecular beam epitaxy at low temperatures (LT-GaAs)...
Transmission mappings (500 μm×500 μm resolution) at wavelengths of 0.9–1.5 μm on 3 in., n+‐GaAs wafe...
In an earlier paper [P.J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller, M. Jurisch, Eu...
In an earlier paper [P.J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller, M. Jurisch, Eu...
We present an optical technique based on absorption measurements for the determination of the charge...
We present an optical technique based on absorption measurements for the determination of the charg...
To date, photo-luminescence (PL) imaging of GaAs wafers affords the only non-contact and non-destruc...
Wafers cut from Si-doped vertical gradient freeze (VGF) GaAs crystals with silicon concentration var...
Supplemental MaterialDoping is a fundamental property of semiconductors and constitutes the basis of...
International audienceDoping is a fundamental property of semiconductors and constitutes the basis o...
The neutral deep-donor density [EL2]0, and dislocation density, ρ D, are measured on adjacent, semi-...
The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are e...
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectron...
The hole diffusion length in n-InGaAs is extracted for two samples of different doping concentration...
Different factors influencing the accuracy of quantitative EL2 mapping were analyzed. It was found t...
[[abstract]]A pump-probe study of GaAs grown by molecular beam epitaxy at low temperatures (LT-GaAs)...