Add to ORKGAcceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temperature‐dependent Hall measurements, deep level transient spectroscopy, and spark source mass spectrometry. It is shown that p‐type conduction is due to presence of the shallow acceptor CAs and the cation antisite double acceptor GaAs. The first and second ionization energies determined for GaAs are 77 and 230 meV from the valence‐band edge
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning t...
Ga-rich GaAs shows two levels at (Esubv plus 78 meV) and (Esubv plus 203 meV) due to a He-like doubl...
Temperature-dependent Hall-effect measurements have been performed on pure, n-type, vapor-phase epit...
Acceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temper...
Two semi-insulating liquid-encapsulated Czochralski GaAs cyrstals, one Cr-doped and the other undope...
Evidence of a surface acceptor state in undoped semi-insulating GaAs by photothermal radiometric dee...
The photoluminescent spectra from high-quality GaAs crystals grown from the vapour phase reveal a do...
The spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs has been stud...
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoioni...
Scanning tunneling spectroscopy (STS) at 8 K is used to study single shallow acceptors embedded near...
We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cro...
The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acce...
We report the first observation of s-like excited states of a double acceptor in a semiconductor. Me...
Optical spectroscopy of impurity levels in GaAs is discussed with special emphasis on acceptors. Pho...
p. 2532-2535The electrical resistivity was investigated from room temperature down to 1.7 K for the ...
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning t...
Ga-rich GaAs shows two levels at (Esubv plus 78 meV) and (Esubv plus 203 meV) due to a He-like doubl...
Temperature-dependent Hall-effect measurements have been performed on pure, n-type, vapor-phase epit...
Acceptors present in undoped p‐type conducting GaAs have been studied with photoluminescence, temper...
Two semi-insulating liquid-encapsulated Czochralski GaAs cyrstals, one Cr-doped and the other undope...
Evidence of a surface acceptor state in undoped semi-insulating GaAs by photothermal radiometric dee...
The photoluminescent spectra from high-quality GaAs crystals grown from the vapour phase reveal a do...
The spatial distribution of residual shallow acceptors in undoped semi-insulating GaAs has been stud...
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoioni...
Scanning tunneling spectroscopy (STS) at 8 K is used to study single shallow acceptors embedded near...
We investigate the energy and symmetry of Zn and Be dopant-induced acceptor states in GaAs using cro...
The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acce...
We report the first observation of s-like excited states of a double acceptor in a semiconductor. Me...
Optical spectroscopy of impurity levels in GaAs is discussed with special emphasis on acceptors. Pho...
p. 2532-2535The electrical resistivity was investigated from room temperature down to 1.7 K for the ...
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning t...
Ga-rich GaAs shows two levels at (Esubv plus 78 meV) and (Esubv plus 203 meV) due to a He-like doubl...
Temperature-dependent Hall-effect measurements have been performed on pure, n-type, vapor-phase epit...