Defect Nature of the 0.4-Ev Center in O-Doped GaAs
- Look, David C.
- Chaudhuri, S.
- Sizelove, J. R.
Publication date
May 1983
DOI Publisher
CORE Scholar ISSN
0003-6951 Language
English Citation count (estimate)
15Abstract
We have studied the Ec - 0.4 e V center in O-doped GaAs by a combination of temperature-dependent Hall-effect measurements, spark-source mass spectroscopy, and secondary-ion mass spectroscopy. The conclusion is that neither 0 nor any other impurity can account for the O.4-eV center; therefore, it is a pure defect
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