Electrical and Optical Properties of Annealed Semi-Insulating GaAs Grown by Vertical Zone Melt Technique
- Fang, Zhaoqiang -Q
- Reynolds, Donald C.
- Look, David C.
- Mier, M. G.
- Jones, Rex L.
- Henry, Richard L.
Publication date
January 1999
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Electrical and optical properties of undoped semi-insulating GaAs grown by the vertical zone melt (VZM) technique and annealed at 950°C under As overpressure have been characterized. The 950°C annealing significantly improves the uniformity and increases both EL2 concentration and mobility. Cu incorporation into the VZM materials has been observed
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