Adsoption of elemental S on clean and Cs-covered si (100)-2xi surfaces, 1996

This study examined the structural and electronic growth- properties of the coadsorption of Cesium and elemental Sulfur on Si (100) - 2x1 reconstructed surfaces. The experiment was conducted in an ultra high vacuum system using low energy electron diffraction (LEED), auger electron spectroscopy (AES), and work function (WF) measurements. The objective was to study the effects of preadsorbed Cesium on the growth of elemental Sulfur, The substrate was a Si (100) - 2x1 reconstructed sample. The results indicate that Sulfur forms three different binding states on the Silicone substrate. These being the hemisulfide (~0.5 ML), the monosulfide (-1 ML), and the disulfide (-2 ML) states. Also, the study shows that the predeposited Cesium reduces the maximum amount of S that can be deposited on the Silicone substrate and prevents the diffusion of Sulfur into the bulk of Si. Furthermore, the presence of Cs does not affect the restoration of the Si (100) surface from a (2x1) to a (lxl) caused by the deposition of elemental S