Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
- Myers, Daniel,
- Espenlaub, Andrew,
- Gelzinyte, Kristina
- Young, Erin,
- Martinelli, Lucio
- Peretti, Jacques
- Weisbuch, Claude
- Speck, James,
DOIAbstract
International audienceWe report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. The detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process
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