Maximizing the efficiency and power density of dc-dc converters demands parallel optimizations in design and control, especially for variable-frequency converters operating over wide frequency ranges. This work presents the full-scale optimization of a kilowatt-range MHz-class boost converter based on impulse rectification. To maximize the heat extraction from the converter and increase its power density, the entire power stage is implemented on a single-layer insulated-metal substrate (IMS). For high efficiencies over wide frequency ranges, high-performance Gallium Nitride (GaN) transistors are employed and various high-frequency materials (MnZn, NiZn, air) with different geometries are compared to realize a wide-bandwidth inductor. Silico...
In this work, a comparative study of the electrical and thermal performance of a silicon carbide (Si...
In this work, a comparative study of the electrical and thermal performance of a silicon carbide (Si...
Abstract—Gallium Nitride (GaN) is increasingly considered a viable semiconductor material in future ...
The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed swi...
In today's world, electrical energy meets an increasing amount of the world's power needs as more co...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range....
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
Increasing the operating frequency of switching converters can have a direct impact in the miniaturi...
The emergence of wide band-gap (WBG) power devices including silicon carbide (SiC) and gallium nitri...
As a special kind of load that requires periodic high power bursts, pulsed loads are widely being po...
Electric mobility is becoming more relevant every year and the number of Electric Vehicles (EVs) wor...
International audienceReal performance breakthrough have been demonstrated for high voltage, high po...
In this work, a comparative study of the electrical and thermal performance of a silicon carbide (Si...
In this work, a comparative study of the electrical and thermal performance of a silicon carbide (Si...
Abstract—Gallium Nitride (GaN) is increasingly considered a viable semiconductor material in future ...
The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed swi...
In today's world, electrical energy meets an increasing amount of the world's power needs as more co...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range....
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
The world of electronics industry has been increasing rapidly and expanding widely in the past three...
Increasing the operating frequency of switching converters can have a direct impact in the miniaturi...
The emergence of wide band-gap (WBG) power devices including silicon carbide (SiC) and gallium nitri...
As a special kind of load that requires periodic high power bursts, pulsed loads are widely being po...
Electric mobility is becoming more relevant every year and the number of Electric Vehicles (EVs) wor...
International audienceReal performance breakthrough have been demonstrated for high voltage, high po...
In this work, a comparative study of the electrical and thermal performance of a silicon carbide (Si...
In this work, a comparative study of the electrical and thermal performance of a silicon carbide (Si...
Abstract—Gallium Nitride (GaN) is increasingly considered a viable semiconductor material in future ...