The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of methyltrichlorosilane (Ge, Y. B.; Gordon, M. S.; Battaglia, F.; Fox, R. O. J. Phys. Chem. A 2007, 111, 1462.) were calculated. Transition state theory was applied to the reactions with a well-defined transition state; canonical variational transition state theory was applied to the barrierless reactions by finding the generalized transition state with the maximum Gibbs free energy along the reaction path. Geometry optimizations were carried out with second-order perturbation theory (MP2) and the cc-pVDZ basis set. The partition functions were calculated within the harmonic oscillator and rigid rotor approximations. The final potential energy s...
This work describes the kinetics and mechanisms of the gas phase pyrolyses of some methylchlorosilan...
Thesis (M.Sc. (Chemistry))--North-West University, Potchefstroom Campus, 2009.Silicon carbide (SiC) ...
A reaction mechanism has been developed that describes the gas-phas 0971 and surface reactions invol...
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of m...
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of m...
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of m...
Structures and energies of the gas-phase species produced during and after the various unimolecular ...
The modeling of the growth of silicon carbide from the vapor phase in the Si-C-H system requires a g...
Methyltrichlorosilane (CH3SiCl3, MTS) has good performance in stoichiometric silicon carbide (SiC) d...
Trichlorosilane is the most used precursor to deposit silicon for photovoltaic applications. Despite...
The gas-phase thermal reactions during disilane decomposition at low pressure chemical v por deposit...
CH3SiCl3 (methyltrichlorosilane) (MTS) is one of the most important precursors for manufacturing bot...
Time resolved studies of silylene, SiH2, generated by the 193 nm laser. ash photolysis of phenylsila...
Pyrolysis of silanes, difluorosilane, and their mixtures has been observed by mass spectroscopy unde...
This work describes the kinetics and mechanisms of the gas phase pyrolyses of some methylchlorosilan...
This work describes the kinetics and mechanisms of the gas phase pyrolyses of some methylchlorosilan...
Thesis (M.Sc. (Chemistry))--North-West University, Potchefstroom Campus, 2009.Silicon carbide (SiC) ...
A reaction mechanism has been developed that describes the gas-phas 0971 and surface reactions invol...
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of m...
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of m...
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of m...
Structures and energies of the gas-phase species produced during and after the various unimolecular ...
The modeling of the growth of silicon carbide from the vapor phase in the Si-C-H system requires a g...
Methyltrichlorosilane (CH3SiCl3, MTS) has good performance in stoichiometric silicon carbide (SiC) d...
Trichlorosilane is the most used precursor to deposit silicon for photovoltaic applications. Despite...
The gas-phase thermal reactions during disilane decomposition at low pressure chemical v por deposit...
CH3SiCl3 (methyltrichlorosilane) (MTS) is one of the most important precursors for manufacturing bot...
Time resolved studies of silylene, SiH2, generated by the 193 nm laser. ash photolysis of phenylsila...
Pyrolysis of silanes, difluorosilane, and their mixtures has been observed by mass spectroscopy unde...
This work describes the kinetics and mechanisms of the gas phase pyrolyses of some methylchlorosilan...
This work describes the kinetics and mechanisms of the gas phase pyrolyses of some methylchlorosilan...
Thesis (M.Sc. (Chemistry))--North-West University, Potchefstroom Campus, 2009.Silicon carbide (SiC) ...
A reaction mechanism has been developed that describes the gas-phas 0971 and surface reactions invol...