Add to ORKGInternational audienceDegradation of InGaAsN pinsubcell under 1MeV electron irradiation was studied by characterizing solar cells and dilute nitride bulklayers before and after irradiation. The measurements show that these cells retain more than 94% of their original photocurrent after an 1015cm-2 electron-irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiatio
International audienceThe defect properties of InGaAsN dilute nitrides grown as sub-monolayer digita...
This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-...
In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cell...
International audienceThe degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was s...
International audienceThe impact of 1 MeV proton irradiation on 1.12 eV bandgap InGaAsN solar cells ...
In this paper, we report that InGaP solar cells irradiated with electrons exhibit a significant reco...
The radiation degradation of In0.5Ga0.5P, GaAs, In0.2Ga0.8As, and In0.3Ga0.7As single-junction solar...
The electrical power supplied to satellites will continue to be provided by solar cells for the fore...
The effects of electron irradiation on the performance of GaAs solar cells with a range of architect...
The direct gap of the In{sub 1-x}Ga{sub x}N alloy system extends continuously from InN (0.7 eV, in t...
Firstly the basic principles involved in the generation and recombination of electron-hole pairs is ...
The analysis of the subcell performance is crucial to understand the device physics and achieve opti...
This paper investigates the degradation of multi-quantum well InGaN solar cells submitted to step-st...
Results of a detailed study of the effects of high-temperature 2-MeV electron irradiation on the per...
A theoretical study of the electrical performance of p-on-n GaAs sub-cells under AM0, irradiated wit...
International audienceThe defect properties of InGaAsN dilute nitrides grown as sub-monolayer digita...
This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-...
In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cell...
International audienceThe degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was s...
International audienceThe impact of 1 MeV proton irradiation on 1.12 eV bandgap InGaAsN solar cells ...
In this paper, we report that InGaP solar cells irradiated with electrons exhibit a significant reco...
The radiation degradation of In0.5Ga0.5P, GaAs, In0.2Ga0.8As, and In0.3Ga0.7As single-junction solar...
The electrical power supplied to satellites will continue to be provided by solar cells for the fore...
The effects of electron irradiation on the performance of GaAs solar cells with a range of architect...
The direct gap of the In{sub 1-x}Ga{sub x}N alloy system extends continuously from InN (0.7 eV, in t...
Firstly the basic principles involved in the generation and recombination of electron-hole pairs is ...
The analysis of the subcell performance is crucial to understand the device physics and achieve opti...
This paper investigates the degradation of multi-quantum well InGaN solar cells submitted to step-st...
Results of a detailed study of the effects of high-temperature 2-MeV electron irradiation on the per...
A theoretical study of the electrical performance of p-on-n GaAs sub-cells under AM0, irradiated wit...
International audienceThe defect properties of InGaAsN dilute nitrides grown as sub-monolayer digita...
This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-...
In this report we present the effects of 1 MeV-electron irradiation on i a-Si:H films and solar cell...