Electronic Structure and Statistical Methods Applied to Nanomagnetism, Diluted Magnetic Semiconductors and Spintronics

This thesis is divided in three parts. In the first part, a study of materials aimed for spintronics applications is presented. More specifically, calculations of the critical temperature in diluted magnetic semiconductors (DMS) and half-metallic ferromagnets are presented using a combination of electronic structure and statistical methods. It is shown that disorder and randomness of the magnetic atoms in DMS materials play a very important role in the determination of the critical temperature. The second part treats materials in reduced dimensions. Studies of multilayer and trilayer systems are presented. A theoretical model that incorporates interdiffusion in a multilayer is developed that gives better agreement with experimental observations. Using Monte Carlo simulations, the observed magnetic properties in the trilayer system Ni/Cu/Co at finite temperatures are qualitatively reproduced. In the third part, electronic structure calculations of complex Mn-based compounds displaying noncollinear magnetism are presented. The calculations reproduce with high accuracy the observed magnetic properties in these compounds. Furthermore, a model based on the electronic structure of the necessary conditions for noncollinear magnetism is presented