Characterization of optical and electrical properties of CdTe:Yb co-doped with Ge

Franc, J.
Horodysky, P.
Grill, R.
Kubát, J.
Saucedo, E.
Sochinskii, N. V.

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Publication date

May 2012

DOI

10.1016/j.jcrysgro.2005.10.022

Publisher

Elsevier BV

ISSN

0022-0248

Journal

0022-0248

Citation count (estimate)

Abstract

The defect structure of CdTe doped with Yb and co-doped with Ge was investigated by a set of optical (photoluminescence, absorption, photoconductivity), galvanomagnetic and thermoelectric methods. The results can be explained by a model, in which Yb acts as a deep donor with the energy level at EV+0.3 eV corresponding to the Yb2+/Yb3+ electronic transition. Introduction of Yb with concentration 1019 cm-3 in the melt results in a decrease of electrically and optically active acceptor defects in the as-grown crystals and causes a decrease of electrical resistivity of CdTe:Ge. A line at 1.585 eV related to an exciton bound to a complex of Yb and Cd vacancy was observed both in photoluminescence and photoconductivity spectra. © 2005 Elsevier B....