A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25

Aragón, G.
Castro, M. J. de
Molina, Sergio I.
González Díez, Yolanda
González Sotos, Luisa
Briones Fernández-Pola, Fernando
García, Rafael

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Publication date

January 1993

DOI

10.1557/PROC-317-315

Publisher

Cambridge University Press (CUP)

ISSN

1946-4274

Journal

MRS Proceedings

Abstract

6 páginas.-- Comunicación presentada al 1993 MRS Fall Meeting, Symposium B – Mechanisms of Thin Film Evolution.The defect structure of GaAsP layer grown by Atomic Layer Molecular Beam Epitaxy on (001) GaAs substrate has been studied by Transmission Electron Microscopy. The phosphorous content and the epilayer thickness have been changed below 25% and 1μm respectively. Three kinds of defect structure have been found: a) α-δ fringes at the interface for coherent epilayer, b) Misfit dislocation for thin epilayers and c) Multiple cracks normal to the interface and parallel to one direction for thick epilayers.Peer reviewe

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A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25

Abstract

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A Study of the Defect Structure in GaAS1−xPx/GaAs AS x<0.25

Abstract

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