4 páginas, 3 figuras.The magnetoluminescence of InAs/GaAs self-assembled quantum dots (QDs) is studied. Using different excitation intensities, the dots are filled with up to 11–12 electron-hole pairs and the magnetic field evolution of the excited-state emissions is revealed. The magnetoluminescence spectra resemble very well the spectra of uncorrelated electro-hole pairs. A splitting of the states with a nonzero angular momentum quantum number is observed and the in-plane reduced electron-hole mass is determined. The experimental value is found to be in a good agreement with the theoretical predictions based on the eight-band k ·p model including both strain effect and band nonparabolicity.Peer reviewe
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 ...
A theoretical study of the photoluminescence peak energies in InAs self-assembled quantum dots embed...
Resonant photoluminescence experiments performed on self-assembled InAs/GaAs quantum dots under stro...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-as...
We have investigated the effects of annealing a self-assembled InGaAs/GaAs quantum dot sample betwee...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-a...
We present the first radiative lifetime measurements and magneto-photoluminescence results of excite...
We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in ...
The electronic energy levels of dome-shape InAs self-assembled quantum dots (SAQD) grown by the Stra...
Magneto-photoluminescence of single- and multi-layered self- organised MOCVD grown InAs quantum dot...
In this thesis the optical properties of self-assembled III-V semiconductor nanostructures are inves...
Results of photoluminescence excitation (PLE) measurements of quantum dots (QDs) in high magnetic fi...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 s...
We study the effect of free carriers on photoluminescence from modulation-doped self-assembled quant...
InAs/GaAs quantum dots (QDs) formation was studied by photoluminescence (PL) in magnetic fields up t...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 ...
A theoretical study of the photoluminescence peak energies in InAs self-assembled quantum dots embed...
Resonant photoluminescence experiments performed on self-assembled InAs/GaAs quantum dots under stro...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-as...
We have investigated the effects of annealing a self-assembled InGaAs/GaAs quantum dot sample betwee...
We report on high-excitation photoluminescence (PL) measurements of an ensemble of InAs/GaAs self-a...
We present the first radiative lifetime measurements and magneto-photoluminescence results of excite...
We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in ...
The electronic energy levels of dome-shape InAs self-assembled quantum dots (SAQD) grown by the Stra...
Magneto-photoluminescence of single- and multi-layered self- organised MOCVD grown InAs quantum dot...
In this thesis the optical properties of self-assembled III-V semiconductor nanostructures are inves...
Results of photoluminescence excitation (PLE) measurements of quantum dots (QDs) in high magnetic fi...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 s...
We study the effect of free carriers on photoluminescence from modulation-doped self-assembled quant...
InAs/GaAs quantum dots (QDs) formation was studied by photoluminescence (PL) in magnetic fields up t...
A set of self-assembled InAs/GaAs quantum dot (QD) samples annealed at various temperatures for 30 ...
A theoretical study of the photoluminescence peak energies in InAs self-assembled quantum dots embed...
Resonant photoluminescence experiments performed on self-assembled InAs/GaAs quantum dots under stro...