Growth and characterization of (InSb)m(InP)n short period superlattices

Short period superlattices of (InSb)m(InP)n were grown on semi-insulating (001) InP substrates by atomic layer molecular beam epitaxy. High resolution x-ray diffractometry was used to study the structural quality of the superlattices. Raman spectroscopy, in conjunction with theoretical calculations, provided information about intermixing at the interfacesThe authors would like to gratefully acknowledge support from the HCM program ~GOODS, network CT930349), and from CICYT through Project Nos. MAT 95-0966-C02- 01, TIC95-0106, and TIC95-0547.Peer reviewe