5 pages, 5 figures, 1 table.Using density functional theory quantum methods, total energy values and vibrational properties have been computed, and thermodynamic properties evaluated, for Ti-substituted GaAs and GaP, proposed as candidates for intermediate band photovoltaic cells. The calculations predict that the formation of these materials from the binary compounds implies an increase in total energy (that is ascribed largely to the change in coordination undergone by Ti, from six-fold to four-fold), and thus phase separation rather than mixed compound formation would be favored. However, the mentioned increase is not larger (for the arsenide case it is actually smaller) than that predicted for Mn-substituted GaAs, a material which has b...
International audienceIn this paper we discuss the formation of the ternary compound Ti5Sn2Ga (tau) ...
International audienceThe total energies of intermetallic compounds in the Ga-Ti system are calculat...
Density Functional Theory (DFT) calculations at the GGA level have been carried out for Ti‐substitut...
Using density functional theory quantum methods, total energy values and vibrational properties have...
Following previous electronic structure calculations that indicated that the substitution of part of...
Several alloy semiconductors containing a transition metal atom of the type MGa4X3 with X=As or P an...
The substitution of some transition atoms in III–V-type semiconductors may give rise to a type of hi...
A metallic isolated band in the middle of the band gap of several III-V semiconductors has been pred...
The substitution of some transition atoms in III–V-type semiconductors may give rise to a type of hi...
A metallic isolated band in the middle of the band gap of several III-V semiconductors has been pred...
Several alloy semiconductors containing a transition metal atom of the type MGa4X3 with X=As or P an...
Several alloy semiconductors containing a transition metal atom of the type MGa4X3 with X=As or P an...
In this work we present Density Functional Theory calculations (at the standard theory level and be...
International audienceIn this paper we discuss the formation of the ternary compound Ti5Sn2Ga (tau) ...
A half-metallic isolated band in the band-gap of GaAs and GaP semiconductors has been found for Ti a...
International audienceIn this paper we discuss the formation of the ternary compound Ti5Sn2Ga (tau) ...
International audienceThe total energies of intermetallic compounds in the Ga-Ti system are calculat...
Density Functional Theory (DFT) calculations at the GGA level have been carried out for Ti‐substitut...
Using density functional theory quantum methods, total energy values and vibrational properties have...
Following previous electronic structure calculations that indicated that the substitution of part of...
Several alloy semiconductors containing a transition metal atom of the type MGa4X3 with X=As or P an...
The substitution of some transition atoms in III–V-type semiconductors may give rise to a type of hi...
A metallic isolated band in the middle of the band gap of several III-V semiconductors has been pred...
The substitution of some transition atoms in III–V-type semiconductors may give rise to a type of hi...
A metallic isolated band in the middle of the band gap of several III-V semiconductors has been pred...
Several alloy semiconductors containing a transition metal atom of the type MGa4X3 with X=As or P an...
Several alloy semiconductors containing a transition metal atom of the type MGa4X3 with X=As or P an...
In this work we present Density Functional Theory calculations (at the standard theory level and be...
International audienceIn this paper we discuss the formation of the ternary compound Ti5Sn2Ga (tau) ...
A half-metallic isolated band in the band-gap of GaAs and GaP semiconductors has been found for Ti a...
International audienceIn this paper we discuss the formation of the ternary compound Ti5Sn2Ga (tau) ...
International audienceThe total energies of intermetallic compounds in the Ga-Ti system are calculat...
Density Functional Theory (DFT) calculations at the GGA level have been carried out for Ti‐substitut...