We perform ab initio calculations on Bi-sc antisite defects in the surface of Bi2Se3, finding strong low-energy defect resonances with a spontaneous ferromagnetism, fixed to an out-of-plane orientation due to an exceptionally large magnetic anisotropy energy. For antisite defects in the surface layer, we find semi-itinerant ferromagnetism and strong hybridization with the Dirac surface state, generating a finite energy gap. For deeper lying defects, such hybridization is largely absent, the magnetic moments become more localized, and no energy gap is present
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
et al.The unoccupied part of the band structure of topological insulators Bi 2Te xSe 3-x (x=0,2,3) i...
Physical Review Letters. Volume 114, Issue 25, 23 June 2015, Article number 256401.A three-dimensio...
We perform ab initio calculations on Bi-sc antisite defects in the surface of Bi2Se3, finding strong...
The robustness of the gapless topological surface state hosted by a 3D topological insulator against...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Surface-states of topological insulators are assumed to be robust against non-magnetic defects in th...
We study the effect of Fe impurities deposited on the surface of the topological insulator Bi2Se3 by...
We study the effect of Fe impurities deposited on the surface of the topological insulator Bi2Se3 by...
We study the effect of Fe impurities deposited on the surface of the topological insulator Bi2Se3 by...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
et al.The unoccupied part of the band structure of topological insulators Bi 2Te xSe 3-x (x=0,2,3) i...
Physical Review Letters. Volume 114, Issue 25, 23 June 2015, Article number 256401.A three-dimensio...
We perform ab initio calculations on Bi-sc antisite defects in the surface of Bi2Se3, finding strong...
The robustness of the gapless topological surface state hosted by a 3D topological insulator against...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Surface-states of topological insulators are assumed to be robust against non-magnetic defects in th...
We study the effect of Fe impurities deposited on the surface of the topological insulator Bi2Se3 by...
We study the effect of Fe impurities deposited on the surface of the topological insulator Bi2Se3 by...
We study the effect of Fe impurities deposited on the surface of the topological insulator Bi2Se3 by...
Topological insulators are characterized by an insulating bulk, and an odd number of Dirac cones in ...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by break...
et al.The unoccupied part of the band structure of topological insulators Bi 2Te xSe 3-x (x=0,2,3) i...
Physical Review Letters. Volume 114, Issue 25, 23 June 2015, Article number 256401.A three-dimensio...